Atomic layer deposition of ferroelectric LiNbO3

Atomic Layer Deposition of TiO

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Single Atomic Layer Ferroelectric on Silicon.

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization...

Atomic layer deposition: an overview.

Atomic layer deposition of ZnS nanotubes.

We report on the growth of high-aspect-ratio (approximately > 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crysta...

Atomic Layer Deposition of Aluminum Oxide

I Acknowledgements II Dedication III List of Figures V